Toshiba Launches 3300V SiC MOSFET Module with High Surge Current Capability that Helps Improve Reliability of Industrial Equipment

KAWASAKI, Japan — Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has expanded its lineup with the launch of “IX800FXF2YMS4,” a dual SiC MOSFET module for industrial equipment, including railway vehicles, renewable energy power generation systems and power conversion systems. The new module features Toshiba’s third-generation silicon carbide (SiC) MOSFET chips, a drain-source voltage rating of 3300V and a drain current (DC) rating of 800A. Its specifications state an I 2 t limit value in the diode section, an indicator of surge current capability.

Manufacturers of industrial equipment, including railway traction inverters and converters, renewable energy power generation systems, and industrial motor control equipment, must constantly meet increasing demands for higher efficiency, smaller size and improved reliability. In these systems, large surge currents that can flow through power semiconductor modules in abnormal conditions must be countered by a sufficient surge current capability.

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IX800FXF2YMS4 has an optimized SiC chip design and delivers an I 2 t characteristic of 300kA 2 s [1] , an indicator of the diode section’s surge current capability under abnormal conditions.

The module has a drain-source on-voltage (sense) (V DS(on)sense ) of 1.4V (typ.) [2] , which helps reduce conduction losses. Its turn-on switching loss (E on ) of 185mJ (typ.) [3] and turn-off switching loss (E off ) of 175mJ (typ.) [3] help reduce switching losses. These characteristics contribute to improved equipment reliability and efficiency, and to smaller cooling systems.

The new product adopts the iXPLV™ package [4] , which offers excellent mounting compatibility. It uses silver sintering bonding technology to improve the heat resistance and reliability of bonded sections with SiC chips, achieving the 175°C channel temperature rating required for industrial equipment.

This new addition to Toshiba’s lineup brings the number of SiC MOSFET modules in the iXPLV™ package to four, broadening the range of available product options.

Toshiba will continue to expand its lineup of SiC MOSFET modules for industrial equipment and provide a wider range of product options that meet diverse equipment specifications and applications. The company will also contribute to more reliable, efficient and compact industrial equipment.

Notes: [1] Test conditions: T ch(initial) =175°C, V GS =-6V, half sine-wave 10ms 1pulse, F.R.=1% [2] Test conditions: I D =800A, V GS =+20V, T ch =25°C [3] Test conditions: V DD =1800V, I D =800A, V GS =+20V/-6V, C gs =100nF, R G(on) =1.2Ω, R G(off) =1.2Ω, T ch =175°C, L S ≃70nH [4] iXPLV TM : Abbreviation for intelligent fleXible Package Low Voltage

Note: [5] SST: A next-generation transformer that utilizes power semiconductors to achieve compact size, highly efficient voltage conversion, and advanced power control.

V DD =1800V, I D =800A, V GS =+20V/-6V, C gs =100nF, R G(on) =1.2Ω, R G(off) =1.2Ω, T ch =175°C, L S ≃70nH

* iXPLV™ is a trademark of Toshiba Electronic Devices & Storage Corporation.